A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
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概要
- 論文の詳細を見る
It is attempted to interpret quantitatively energy losses of keV electrons re-flected from targets with a simple phenomenological approach. In the case of athin layer film on a thick substrate, loss intensities can be represented by a super-position of loss data on both the film and the substrate materials. The results areapplied to Si-Sin. couples (oxide thickness up to x60 A), which show that thepresent approach leads to a good agreement between experimentally obtainedloss spectra and calculated or synthesized ones. In the calculation, the dependenceof inelastic mean free path 2 of electron on electron energy E is proposed as2ccE"""". Also from the curve fitting, it is demonstrated that the loss data givethe film thickness within 5 '/, errors.
- 社団法人日本物理学会の論文
- 1981-08-15
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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IWAMI Motohiro
Department of Electrical Engineering, Osaka University
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Hiraki Akio
The University Of Electro-communications
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Iwami Motohiro
Department Of Electrical Engineering Osaka University
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Iwami Motohiro
Faculty Of Engineering Osaka University
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Iwami Motohiro
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng
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HORIIKE Akio
The University of Electro-Communications
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