Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Hirao Takashi
Department Of Electrical Engineering Osaka University
-
MORI Yusuke
Department of Engineering, Osaka University
-
Hiramatsu Takahiro
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
-
Hirao T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
DEGUCHI Masahiro
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
-
EIMORI Nobuhiro
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
NISHIMURA Kazuhito
Osaka Diamond Industrial Co., Ltd.
-
KITABATAKE Makoto
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
-
ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
MA Jing
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Hirao T
Research Institute For Nano-devices Kochi University Of Technology
-
Mori Y
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
-
Mori Yusuke
Department Of Electrical Engineering Osaka University
-
Mori Yoshihiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
-
Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Nishimura Kazuki
New Materials Research Center Sanyo Electric Co. Ltd.
-
Nishimura K
New Materials Research Center Sanyo Electric Co. Ltd.
-
Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cooperative Research Ce
-
Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
-
Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Ma Jing
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Ma Jing
Department Of Chemistry Faculty Of Engineering Gifu University
-
Eimori Nobuhiro
Department Of Electrical Engineering Osaka University
-
DEGUCHI Mikio
Niihama National College of Technology
-
Nishimura Kohsuke
Kdd R&d Laboratories
-
Deguchi M
Niihama National Coll. Technol. Ehime Jpn
-
Deguchi Masahiro
Central Research Laboratories Matsushita Electric Industrial Co. Lid.
-
Mori Yusuke
Department Of Applied Chemistry School Of Science And Engineering Waseda University
-
Hirao Takashi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
-
Kitabatake Makoto
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Kitabatake Makoto
Central Research Lab. Matsushita Electr. Ind. Co.
-
Mori Y
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
関連論文
- Effect of pulsed substrate bias on film properties of SiO2 deposited by inductively coupled plasma chemical vapor deposition (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation
- Low-Temperature Synthesis of Aligned Carbon Nanofibers on Glass Substrates by Inductively Coupled Plasma Chemical Vapor Deposition
- High-Quality Organic 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystals for THz Wave Generation
- Characterization of Two-Photon Absorption Related to the Enhanced Bulk Damage Resistance in CsLiB_6O_ Crystal
- Protein Crystal Growth Using Laser-Processed Seed Crystals
- Laser Irradiated Growth of Protein Crystal
- Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst
- Effect of RF Plasma Etching on Surface Damage in CsLiB_6O_ Crystal
- Enhanced nucleation of microcrystalline silicon thin films deposited by inductively coupled plasma chemical vapor deposition with low-frequency pulse substrate bias
- Intense Green Cathodoluminescence from Low-Temperature-Deposited ZnO Film with Fluted Hexagonal Cone Nanostructures
- SiO_2 Insulator Film Synthesized at 100℃ Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition
- Effect of energetic particle bombardment on microstructure of zinc oxide films deposited by RF magnetron sputtering
- Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering
- Density Control of Carbon Nanotubes through the Thickness of Fe/Al Multilayer Catalyst
- Formation of Nanoscale Diamond Particles without Substrate Heating by Cathodic Arc Deposition
- Correlation between Field Electron Emission and Structural Properties in Randomly and Vertically Oriented Carbon Nanotube Films
- Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
- Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Development of New Apparatus for Field Emission Measurement
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
- Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
- Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
- Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
- Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
- Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
- Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
- Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
- Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
- β-SiC Formation by Low-Energy Ion-Doping Technique
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
- Superconductivity in Nd-Ce-Cu-O Thin Films
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
- Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
- Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
- Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
- The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
- Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
- High-Quality Organic 4-Dimethylamino-N-Methyl-4-Stilbazolium Tosylate (DAST) Crystal for Electro-Optic Measurement(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- Electro-Optic Measurement Using High-Quality : 4-dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystal
- Processing of Membrane Protein Crystal Using Ultraviolet Laser Irradiation(METHODS, Advances in Biomedical Science and Engineering)
- Femtosecond Laser Processing of Protein Crystals in Crystallization Drop
- Temperature-Screening System for Determining Protein Crystallization Conditions
- Protein Crystallization by Combining Laser Irradiation and Solution-Stirring Techniques
- Protein Cryocrystallography Using Laser-Processed Crystal
- Membrane Protein Crystallization Using Laser Irradiation
- Ion Etching of Fused Silica Glasses for High-Power Lasers
- Direct Synthesis of Carbon Nanotubes on Ti-Coated Metal Substrates and Its -Application to Electrochemical Double Layer Capacitors
- Synthesis of Aligned Carbon Nanofibers at 200℃
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Scanning Tunneling Microscopy Study of the c(4X4) Structure Formation in the Sub-Monolayer Sb/Si(100) System : Surfaces, Interfaces, and Films
- Mg/Si(100) Reconstructions Studied by Scanning Tunneling Microscopy
- Growth and Optical Characterization of Cr^YAB and Cr^YGAB Crystal for New Tunable and Self-Frequency Doubling Laser
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Generation of Protein Crystals Using a Solution-Stirring Technique
- Improving the Quality of Protein Crystals Using Stirring Crystallization
- IIB-01 Expression of Hypoxia-related markers, GLUT-1 and HIF-1 alpha, in the ovarian tumors : association with histology and tumor grade(THE 46TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTRY AND CYTOCHEMISTRY)
- Role of Hepatocyte Growth Factor and c-Met Receptor in Neoplastic Conditions of Salivary Glands
- Crystallographic Orientations of Mg0 Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
- Effects of KCl Addition on the K_2CO_3 Flux Growth of Ca_3Co_4O_9 Crystals for a Thermoelectric Device
- 90°Phase-Matching Properties of YCa_4O(BO_3)_3 and Gd_x Y_Ca_4O(BO_3)_3
- Investigation of the Gd Variation of Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Application : Structure and Mechanical and Thermal Properties of Condensed Matter
- Photoinduced Damage in Gd_Y_xCa_4O(BO_3)_3 Crystals
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Coevaporation Effect of Te on P-Type CdTe:Cu Film Formation
- Silver-Induced 3 × 3 Phase on 6H-SiC(0001)√ × √ Surface
- Direct Observation of Strained Layer Formation at the Initial Stage of In Thin Film Growth on Si(100)
- Preparation of PbTiO_3 Thin Films by Ion- and Photoassisted Evaporation
- Preparation and Characterization of Pb-Based Ferroelectric Thin Films : Thin Films
- Preparation and Characterization of CuInSe_2 Thin Films by Molecular-Beam Deposition Method
- Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
- Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE)
- Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System
- Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
- Lower-Temperature Growth of Hydrogenated Amorphous Silicon Films from Inductively Coupled Silane Plasma
- Simple Direct Monitoring of SiH_3 Radical and Particulates in a Silane Plasma with Ultraviolet Transmission Spectroscopy
- Positive bias instability of bottom-gate zinc oxide thin-film transistors with a SiOx/SiNx-stacked gate insulator (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
- Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
- Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
- Preparation and Properties of Cd_Mn_xS Thin Films
- Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement
- Frequency Control Method of Magnetostatic Wave Oscillators Using External pin Diode Circuits
- Simulation of Magnetostatic Wave Envelope Soliton Propagation in Yttrium Iron Garnet Films
- (100) Preferred Orientation of Spinel-Type Iron Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Preparation of Co Ferrite Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si