Hiramatsu Takahiro | Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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概要
- 同名の論文著者
- Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850の論文著者
関連著者
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Hiramatsu Takahiro
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hirao T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hirao T
Research Institute For Nano-devices Kochi University Of Technology
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Hirao Takashi
Department Of Electrical Engineering Osaka University
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KITAGAWA Masatoshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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KAMADA Takeshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Kamada Takeshi
Central Research Laboratories Matsushita Electric Industrial Co. Lid.
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OURA Kenjiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Oura K
Research Center For Ultrahigh Voltage Electron Microscopy Osaka University
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HAYASHI Shigenori
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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WASA Kiyotaka
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Wasa Kiyotaka
Research Institute Of Innovative Technology For The Earth
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KATAYAMA Mitsuhiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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SETSUNE Kentaro
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Furuta Mamoru
Research Institute For Nano-devices Kochi University Of Technology
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HIRAO Takashi
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
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HONDA Shin-ichi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Katayama Mitsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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DEGUCHI Masahiro
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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IZUMI Tomio
Department of Electronic Engineering, Faculty of Engineering, Tokai University
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Izumi Teruo
Superconductivity Research Laboratory Istec
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LEE Kuei-Yi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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MORI Yusuke
Department of Engineering, Osaka University
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FURUTA Hiroshi
Research Institute, Kochi University of Technology
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HIRAO Takashi
Research Institute, Kochi University of Technology
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KITABATAKE Makoto
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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TAKAYAMA Ryoichi
Central Research Laboratories, Matsushita, Electric Industrial Co., Ltd.
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Mori Y
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mori Yusuke
Department Of Electrical Engineering Osaka University
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Ryu Jeong-tak
Faculty Of Computer & Communication Engineering Taegu University
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SASAKI Takatomo
Department of Engineering, Osaka University
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EIMORI Nobuhiro
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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NISHIMURA Kazuhito
Osaka Diamond Industrial Co., Ltd.
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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KANNO Isaku
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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YOSHIDA Akihisa
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Matsuda Tokiyoshi
Research Institute Kochi University Of Technology
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Kubo Osamu
Department Of Neurosurgery Institute Of Clinical Neurology Tokyo Women's Medical University
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HARADA Toru
Department of Pediatric Surgery, Nagoya University Graduate School of Medicine
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Kanno I
Matsushita Electric Ind. Co. Ltd. Kyoto Jpn
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Sasaki T
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Izumi T
Department Of Engineering Physics College Of Engineering Chubu University
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KOBAYASHI Tadashi
Department of Physics, Aoyama Gakuin University
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IKUNO Takashi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Iwahashi Tomoya
Matsushita Electric Works Ltd.
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Takashi Ikuno
Department Of Electric Engineering Graduate School Of Engineering Osaka University
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片山 光浩
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Toyoda Haruhisa
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Furuta Mamoru
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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RYU Jeong-Tak
Department of Computer and Communication Engineering Taegu University
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YAGI Hiromasa
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HATTA Akimitsu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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MANABE Yoshio
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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YOSHIOKA Yoshiaki
Central Research Laboratories, Matsushita Electric Industrial Co.,Ltd.
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HIRAO Takashi
Matsushita Technoresearch Inc.
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GOTO Masashi
Department of General Medicine and Clinical Epidemiology, Kyoto University Graduate School of Medici
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Yagi Hideki
Konoshima Chemical Co. Ltd.
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Toyoda H
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Toyoda H
Nagoya Univ. Nagoya Jpn
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Ryu Jeong-tak
Department Of Computer And Communication Engineering Daegu University
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FUJII Eiji
Industrial Technology Center of Okayama Prefecture
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Wasa K
Res. Inst. Innovative Technol. Earth Kyoto Jpn
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Goto M
Matsushita Electric Industrial Co.
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Kohiki S
Kyushu Inst. Of Technol. Kitakyushu Jpn
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Kohiki Shigemi
Faculty Of Engineering Kyushu Institute Of Technology
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Kohiki Shigemi
Kochi National College Of Technology
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Yagi H
Konoshima Chemical Co. Ltd.
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FUJII Eiji
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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TORII Hideo
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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Okada Takashi
Department of Cardiology, Kyoto First Red Cross Hospital
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本多 信一
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Honda Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Lee Kuei-yi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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後藤 誠
北陸職業能力開発大学校
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Katayama Mitsuhiro
Osaka Univ. Osaka Jpn
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AOKI Katsunori
Rodel Nitta Company
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Sugai Hideo
Department of Electrical Engineering, Nagoya University
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ADACHI Hirohiko
Department of materials science and engineering, Kyoto University
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AOKI Katsunori
Nitta Haas Company
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Honda Shinichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Mori Y
Research Center For Ultra-precision Science And Technology Graduate School Of Engineering Osaka Univ
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KAWAHARAMURA Toshiyuki
Research Institute for Nano-devices, Kochi University of Technology
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MATSUDA Tokiyoshi
Research Institute for Nano-devices, Kochi University of Technology
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YAGYU Hiroyuki
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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OHMURA Takuichi
Matsushita Technoresearch, Inc.
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KOMAKI Kazuki
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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KOHIKI Shigemi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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MATSUDA Akihisa
Electrotechnical Laboratory
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ADACHI Hideaki
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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TSUKAMOTO Kazuyoshi
Matsushita Technoresearch Inc.
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YANO Hiroshi
Department of Surgery, NTT West Osaka Hospital
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Hiraki A
Faculty Of Engineering University Of The Ryukyus
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Saranin A
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Toyoda Hirotaka
Department Of Electrical Engineering Nagoya University
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SARANIN Alexander
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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ZOTOV Andrey
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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YAMAOKA Nobumitsu
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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HIRAO Taichi
Department of Electronic Science and Engineering, Kyoto University
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Sugai Hideo
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Sugai Hideo
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Zotov A
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Zotov Andrey
大阪大学大学院工学研究科電子工学専攻
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Mori K
Saga Univ. Saga Jpn
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Okada Takuya
Faculty Of Science Gakushuin University
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Okada Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Komaki Kazuki
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Koike T
Toshiba Corp. Yokohama Jpn
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Mori Yoshihiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Kimoto T
Kyoto Univ. Kyoto Jpn
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TOMOZAWA Atsushi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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Tanaka K
Electrotechnical Laboratory
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古田 寛
高知工科大学
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Wang Xiao
Department of Medical Microbiology, Shandong University School of Medicine
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Honda Shin‐ichi
Osaka Univ. Osaka Jpn
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MORI Hirotaro
Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University
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OURA Kenjiro
Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University
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LEE Jung-Goo
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University
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YAMAMOTO Tetsurou
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
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HONDA Shinichi
Department of Electric Engineering, Graduate School of Engineering, Osaka University
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Yamamoto Tetsurou
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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LI Chaoyang
Research Institute for Nano-devices, Kochi University of Technology
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HIRAMATSU Takahiro
Research Institute for Nano-devices, Kochi University of Technology
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HIRAMATSU Takahiro
Kochi Casio Co., Ltd.
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KOMUKAI Takuji
Graduate School of Engineering, Kochi University of Technology
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AOKI Katsunori
SONAC Incorporated
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SUZUKI Keisuke
SONAC Incorporated
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ISHII Kazuhisa
SONAC Incorporated
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TAKANASHI Kumiko
SONAC Incorporated
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KOMUKAI Takuji
SONAC Incorporated
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HIRAO Takashi
Kouchi University of Technology
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FURUTA Hiroshi
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
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ITO Korekiyo
Department of Electrical Engineering, Osaka University
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FURUTA Hiroshi
Japan Fine Ceramics Center
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YAP Yoke
Department of Electrical Engineering, Osaka University
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ARIMATSU Daiki
Department of Electronic Engineering, Faculty of Engineering Osaka University
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KOHARA Hidekazu
Department of Electronic Engineering, Faculty of Engineering Osaka University
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SHOW Yoshiyuki
Department of Electronic Engineering, Faculty of Engineering, Tokai University
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MA Jing
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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ARAI Naoki
Department of Electronics, Faculty of Engineering, Tokai University
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Aoki Katsunori
Nitta-haas Inc.
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MORI Koshiro
Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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KITAGAWA Masatoshi
Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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HIRAO Takashi
Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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ISHIHARA Shinichiro
Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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OHNO Masaharu
Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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SAKAKIMA Hiroshi
Central Research Laboratories, Matsushita, Electric Industrial Co., Ltd.
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DEGUCHI Takashi
Air Conditioning Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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TAKAYAMA Ryoichi
Materials and Components Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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SHIBUYA Munehiro
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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NISHITSUJI Mitsuru
Semiconductor Research Center, Matsushita Electric Industrial Co, Ltd.
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TAMURA Akiyoshi
Semiconductor Research Center, Matsushita Electric Industrial Co, Ltd.
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HANGYO Masanori
Faculty of Engineering, Osaka University
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NAKASHIMA Shin-ichi
Faculty of Engineering, Osaka University
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MATSUO Naoto
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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FUSE Genshyu
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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IWASAKI Hiroshi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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TSUKAMOTO Kazuyoshi
Central Research Laboratories, Matsushita Electric Industrial Co.,Ltd.
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KURAMASU Keizaburo
Central Research Laboratories, Matsushita Electric Industrial Co.,Ltd.
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KORECHIKA Tetsuhito
Central Research Laboratories, Matsushita Electric Industrial Co.,Ltd.
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MIYAUCHI Michihiro
Elecrical Technical Laboratory
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MATSUDA Akihisa
Elecrical Technical Laboratory.
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TANAKA Kazunobu
Central Research Laboratories, Matsushita Electric Industral Co., Ltd.
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MORI Koshiro
Matsushita Technoresearch Inc.
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MATSUDA Akihisa
Amorphous Materials Section, Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Matsuda Tokiyoshi
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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MIYAKE TAKASHI
Department of Thoracic and Cardiovascular Surgery, Kawasaki Medical School
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Murata Yuya
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Arimatsu Daiki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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HAYASHI Nobuyuki
Department of Electronic Engineering Graduate School of Engineering, Osaka University
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ENDO Koji
New Materials Research Center,Advanced Functional Materials Department, Sanyo Electric., Ltd.
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KIMOTO Mamoru
New Materials Research Center,Advanced Functional Materials Department, Sanyo Electric., Ltd.
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NISHIMURA Koichi
New Materials Research Center,Advanced Functional Materials Department, Sanyo Electric., Ltd.
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NISHIO Koji
New Materials Research Center,Advanced Functional Materials Department, Sanyo Electric., Ltd.
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HONDA Shini-ichi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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KUZUOKA Takashi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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TERAO Yasuhiro
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
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SOGI Tadayuki
Fundamental Research Laboratories, Osaka Gas Co., Ltd.
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YOKOTA Yoshihiro
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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OHNISHI Hisao
Fundamental Research Laboratories, Osaka Gas Co., Ltd.
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LIFSHITS Victor
Institute of Automation and Control Processes
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KOTLYAR Vasiliy
Institute of Automation Control Processes
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RYU Jeong
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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TANI Hitoshi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Ikuno Takashi
Department Of Electric Engineering Graduate School Of Engineering Osaka University
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Kohiki Shigemi
Matsushita Technoresearch Inc.
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Shibuya Masato
Optical Division Nikon Corporation
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Ohno Masaharu
Materials Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Kohara Hidekazu
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Kuzuoka Takashi
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Kimoto Mamoru
New Materials Research Center Advanced Functional Materials Department Sanyo Electric. Ltd.
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Endo Koji
New Materials Research Center Advanced Functional Materials Department Sanyo Electric. Ltd.
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FUJII Satoru
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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Fujii Syuitsu
Adtec Co. Ltd.
著作論文
- Effect of pulsed substrate bias on film properties of SiO2 deposited by inductively coupled plasma chemical vapor deposition (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Low-Temperature Synthesis of Aligned Carbon Nanofibers on Glass Substrates by Inductively Coupled Plasma Chemical Vapor Deposition
- Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst
- Enhanced nucleation of microcrystalline silicon thin films deposited by inductively coupled plasma chemical vapor deposition with low-frequency pulse substrate bias
- Intense Green Cathodoluminescence from Low-Temperature-Deposited ZnO Film with Fluted Hexagonal Cone Nanostructures
- SiO_2 Insulator Film Synthesized at 100℃ Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition
- Effect of energetic particle bombardment on microstructure of zinc oxide films deposited by RF magnetron sputtering
- Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering
- Density Control of Carbon Nanotubes through the Thickness of Fe/Al Multilayer Catalyst
- Formation of Nanoscale Diamond Particles without Substrate Heating by Cathodic Arc Deposition
- Correlation between Field Electron Emission and Structural Properties in Randomly and Vertically Oriented Carbon Nanotube Films
- Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
- Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Development of New Apparatus for Field Emission Measurement
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
- Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
- Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
- Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
- Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge
- Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
- Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
- Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
- Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
- Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
- β-SiC Formation by Low-Energy Ion-Doping Technique
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
- Superconductivity in Nd-Ce-Cu-O Thin Films
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
- Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
- Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
- Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
- The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
- Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
- Direct Synthesis of Carbon Nanotubes on Ti-Coated Metal Substrates and Its -Application to Electrochemical Double Layer Capacitors
- Synthesis of Aligned Carbon Nanofibers at 200℃
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Scanning Tunneling Microscopy Study of the c(4X4) Structure Formation in the Sub-Monolayer Sb/Si(100) System : Surfaces, Interfaces, and Films
- Mg/Si(100) Reconstructions Studied by Scanning Tunneling Microscopy
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Crystallographic Orientations of Mg0 Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
- Silver-Induced 3 × 3 Phase on 6H-SiC(0001)√ × √ Surface
- Direct Observation of Strained Layer Formation at the Initial Stage of In Thin Film Growth on Si(100)
- Preparation of PbTiO_3 Thin Films by Ion- and Photoassisted Evaporation
- Preparation and Characterization of Pb-Based Ferroelectric Thin Films : Thin Films
- Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
- Lower-Temperature Growth of Hydrogenated Amorphous Silicon Films from Inductively Coupled Silane Plasma
- Simple Direct Monitoring of SiH_3 Radical and Particulates in a Silane Plasma with Ultraviolet Transmission Spectroscopy
- Positive bias instability of bottom-gate zinc oxide thin-film transistors with a SiOx/SiNx-stacked gate insulator (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
- Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
- Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement
- Frequency Control Method of Magnetostatic Wave Oscillators Using External pin Diode Circuits
- Simulation of Magnetostatic Wave Envelope Soliton Propagation in Yttrium Iron Garnet Films
- (100) Preferred Orientation of Spinel-Type Iron Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Preparation of Co Ferrite Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition