High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• Hirao Takashi

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Hirao Takashi

  Department Of Electrical Engineering Osaka University

• Hiramatsu Takahiro

  Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850

• Hirao T

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• YANO Hiroshi

  Department of Surgery, NTT West Osaka Hospital

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• Hirao T

  Research Institute For Nano-devices Kochi University Of Technology

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• HIRAO Taichi

  Department of Electronic Science and Engineering, Kyoto University

• Kimoto T

  Kyoto Univ. Kyoto Jpn

• Yano H

  Kyoto Univ. Kyoto‐shi Jpn

• Yano Hiroshi

  Department Of Surgery Ntt West Osaka Hospital

• Kimoto Tsunenobu

  Science And Engineering Kyoto University

• Yano H

  Science And Engineering Kyoto University:(present Address) Graduate School Of Materials Science Nara

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Yano Hiroshi

  Department Of Agricultural Chemistry Tohoku University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University

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