High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-03-25
著者
-
KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
-
DANNO Katsunori
Department of Electronic Science and Engineering, Kyoto University
関連論文
- A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
- Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
- High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
- Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- Robust 4H-SiC pn Diodes Fabricated using (1120) Face
- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
- Recent Progress in Epitaxial Growth of SiC for Power Devices
- Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
- Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
- 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃
- High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers