Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-02-15

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• Yamashita Atsushi

  Department of Pathology, Faculty of Medicine, University of Miyazaki

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Yoo W

  Wafermasters Inc. Ca Usa

• Kimoto T

  Kyoto Univ. Kyoto Jpn

• Yamashita A

  Tokai Univ. Hiratsuka Jpn

• YOO Woo

  Department of Electrical Engineering, Kyoto University

• Nishino Hironori

  Department of Electrical Engineering, Faculty of Engineering, Kyoto University

• Ueda Tetsuzo

  Department of Electrical Engineering, Faculty of Engineering, Kyoto University

• Yoo Woo

  Wafer Masters Inc.

• Yoo Woo

  Department Of Electrical Engineering Kyoto University

• Yamashita Atsushi

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University:(present Address) Nec C

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Ueda Tetsuzo

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Yamashita A

  Ntt Interdisciplinary Research Laboratories

• Yamashita Atsushi

  Department Of Agricultural Chemistry Tottori University

• Nishino Hironori

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Yoo Woo

  Wafer Masters, Inc.

関連論文

• A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
• Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
• OJ-120 New Thrombolytic Technique with Ultrasound in Acute Coronary Syndrome(Thromboembolism/Antithrombotic therapy/Thrombolysis-2 (H) OJ20,Oral Presentation (Japanese),The 70th Anniversary Annual Scientific Meeting of the Japanese Circulation Society)
• Electrical activation of high-concentration aluminum implanted in 4H-SiC
• Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
• 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
• Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(Heterostructure Microelectronics with TWHM2003)
• Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
• Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
• Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
• Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces
• Anisotropy in breakdown field of 4H-SiC
• High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
• Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)
• Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
• Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
• Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's
• Performance limiting surface defects in SiC epitaxial p-n junction diodes
• μSR Studies on Spin-Peierls System Cu_Zn_xGeO_3 (x=0, 0.01, 0.03, and 0.07)
• Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
• Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
• Ultrasound Accelerates Thrombolysis of Acutely Induced Platelet-Rich Thrombi Similar to Those in Acute Myocardial Infarction
• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
• Atypical extraventricular neurocytoma
• High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
• Solubilities and Equilibrium Distribution Coefficients of Oxygen and Carbon in Silicon
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
• Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
• Deep Interface States in SiO_2/p-type α-SiC Structure
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
• Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
• Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
• High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
• High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
• Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
• Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Effect of Carboxyl Group in O-Methacryloyl-N-Acyl Tyrosines on Adhesiveness to Unteched Human Dentin
• Correlation of Dentin Bond Durability with Water Absorption of Bonding Layer
• Steric Effects of N-Acyl Group in O-Methacryloyl-N-Acyl Tyrosines on the Adhesiveness of Unetched Human Dentin
• Two-stage operation for hepatocellular carcinoma with synchronous bilateral adrenal gland metastasis
• Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
• Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
• Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
• Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
• Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
• Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
• Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
• Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
• Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
• Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
• Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
• Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
• Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
• Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
• Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
• Robust 4H-SiC pn Diodes Fabricated using (1120) Face
• High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
• Recent Progress in Epitaxial Growth of SiC for Power Devices
• Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
• Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
• Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
• Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
• Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
• Rapid Turnover of Tryptophan Hydroxylase Is Driven by Proteasomes in RBL2H3 Cells,a Serotonin Producing Mast Cell Line^1
• Elutriation of Very Fine Particles from Fluidized Bed-Effect of Mean Diameter Bed Particles
• Removal of Adherent Waterdrops from Images Acquired with a Stereo Camera System(Stereo and Multiple View Analysis,Machine Vision Applications)
• ENVIRONMENT OBSERVATION BY STRUCTURE FROM MOTION WITH AN OMNI-DIRECTIONAL CAMERA(International Workshop on Advanced Image Technology 2006)
• Virtual wiper - removal of adherent noises from images of dynamic scenes by using a pan-tilt camera
• Region Extraction with Chromakey Using Stripe Backgrounds (Methodologies) (Machine Vision Applications)
• BRAIN ADENYLATE CYCLASE INHIBITION BY BENZODIAZEPINES
• CHARACTERIZATION OF HETEROLOGOUS DESENSITIZATION OF RAT RETICULOCYTE ADENYLATE CYCLASE SYSTEM
• INHIBITION OF BRAIN ADENYLATE CYCLASE BY BARBITURATES THROUGH THE EFFECT ON THE INTERACTION BETWEEN GUANINE NUCLEOTIDE-BINDING STIMULATORY REGULATORY PROTEIN AND CATALITIC UNIT
• Chlorophyll b-Deficient Mutants of Rice : II. Antenna Chlorophyll a/b-Proteins of Photosystem I and II
• Chlorophyll b-Deficient Mutants of Rice : I. Absorption and Fluorescence Spectra and Chlorophyll a/b Ratios
• INTERACTIONS BETWEEN VARIOUS LIGANDS IN THE ACTIVATION AND DESENSITIZATION OF ADENYLATE CYCLASE SYSTEM
• Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
• Acid Degradation of Amino-monosaccharides and Amino-polysaccharides(Organic Chemistry)
• Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃

もっと見る 閉じる

スポンサーリンク