High-Quality Homoepitaxial Diamond Films Grown at Normal Deposition Rates : Structure and Mechanical and Thermal Properties of Condensed Matter
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概要
- 論文の詳細を見る
High-quality homoepitaxial diamond films without any growth hillocks and abnormal particles have been successfully deposited at a reasonably high deposition speed of 〜0.5 μm/h by a 5 kW microwave plasma chemical vapor deposition system. These films show cathodoluminescence (CL) spectra predominated by strong free-exciton recombination radiation assisted by a transverse optical phonon and its replicas even at room temperature. The temperature dependence of the CL feature has been analyzed quantitatively. The results suggest that a considerable reduction of non-radiative relaxation paths is accomplished in the present case of high-quality diamond films.
- 社団法人応用物理学会の論文
- 2001-03-01
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Irie Makoto
Nagaoka Univerity Of Technology Kamitomioka
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IRIE Masatake
Department of Electrical Engineering, Osaka University
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Wang Chunlei
Department Of Physics Shandong University
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Wang Chunlei
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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Irie Masatake
Department Of Electrical Engineering Osaka University
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