Characterization of $\alpha$-NPD Thermally Deposited on Hydrogen-Terminated Single-Crystal Chemical-Vapor-Deposited Diamond Films

概要

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We have investigated the interface formation between hydrogen-terminated homoepitaxial (100) chemical-vapor-deposited (CVD) diamond films and thermally deposited N,N$'$-diphenyl-N,N$'$-bis(1-naphthyl)-1,1$'$biphenyl-4,4$''$diamine ($\alpha$-NPD). The deposited $\alpha$-NPD was found to form islands at the earliest initial stage, and to subsequently become a continuous film. It turned out that both X-ray photoemission peak positions of C1s and N1s electrons shifted to lower binding energies after the interface formation between sufficiently thin $\alpha$-NPD films (${<}10$ nm) and the H-terminated $p$-type diamond, indicating that a substantial interaction between the H-terminated CVD diamond and the deposited $\alpha$-NPD occurred. The possible origin of the interaction is discussed in relation to charge transfer and a relative change in the energy levels between $\alpha$-NPD and the H-terminated diamond. Photoluminescence spectra taken from the deposited $\alpha$-NPD films showed a broad emission peak at 435 nm with an excitation peak at 350 nm, differing from those taken from $\alpha$-NPD in a chloroform solvent.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-08-15