Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Sato M
Tohoku Univ. Sendai Jpn
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MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
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Maehashi K
The Institute Of Scientific And Industrial Research Osaka University
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Sato M
Institute for Molecular Science
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NAKASHIMA Hisao
The Institute of Scientific and Industrial Research, Osaka University
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Sato M
Faculty Of Mercantile Marine Science Kobe University Of Merchantile Marine
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HASEGAWA Shigehiko
The Institute of Scientific and Industrial Research,Osaka University
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Sato Masa-aki
Faculty Of Mercantile Marine Science Kobe University Of Merchantile Marine
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Sato Masamichi
The Institute of Scientific and Industrial Research, Osaka University
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Nakashima H
Hyogo University
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Nakashima Hisao
The Institute Of Scientific And Industrial Research Osaka University
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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