HASEGAWA Shigehiko | The Institute of Scientific and Industrial Research,Osaka University

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概要

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著作論文

Diffuse Scattering in the High-Temperature(1×1)State of Si(111)
Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
Charge-Balanced Heteroepitaxial Growth of GaAs on Si
Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
1.3-1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates

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