Hasegawa Shigehiko | The Institute Of Scientific And Industrial Research Osaka University

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概要

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著作論文

Diffuse Scattering in the High-Temperature(1×1)State of Si(111)
Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
Charge-Balanced Heteroepitaxial Growth of GaAs on Si
Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates
Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110)
Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
1.3–1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
Negative Magnetoresistance Generated by Combination of Spin--Orbit Interaction and Applied Magnetic Field
Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin--Orbit Interaction
Generation of Spin Current in Bipolar Conductors
Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application
Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

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