Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-08-10

著者

• Asahi Hajime

  The Institute Of Scientific And Industrial Research Osaha University

• Mukai Toshikazu

  The Institute Of Scientific And Industrial Research Osaka University

• Hasegawa Shigehiko

  The Institute Of Scientific And Industrial Research Osaka University

• FUJIWARA Atsushi

  The Institute of Scientific and Industrial Research, Osaka University

• MATSUMOTO Takeshi

  The Institute of Scientific and Industrial Research, Osaka University

• Fujiwara Atsushi

  The Institute Of Scientific And Industrial Research Osaka University

• Matsumoto Takeshi

  The Institute Of Scientific And Industrial Research Osaka University

関連論文

• CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
• Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
• Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
• Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
• Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
• Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
• Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
• Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
• Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
• Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
• Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
• Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
• Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
• Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
• Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
• Diffuse Scattering in the High-Temperature(1×1)State of Si(111)
• TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
• Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
• Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
• Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
• Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
• Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
• Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
• Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
• Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
• Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
• Charge-Balanced Heteroepitaxial Growth of GaAs on Si
• 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
• Field Emission from Polycrystalline GaN Grown on Mo Substrate : Semiconductors
• High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
• Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates
• Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
• Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
• Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
• GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
• Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
• Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
• Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110)
• New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
• Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy
• In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
• Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
• Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
• Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
• 1.3–1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
• Negative Magnetoresistance Generated by Combination of Spin--Orbit Interaction and Applied Magnetic Field
• Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin--Orbit Interaction
• Generation of Spin Current in Bipolar Conductors
• Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
• Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
• Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
• Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
• Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
• Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application
• Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
• In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

もっと見る 閉じる

スポンサーリンク