Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-20
著者
-
Sumida Hitoshi
The Institute Of Scientific And Industrial Research Osaka University
-
ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
-
GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
-
YU Soon
The Institute of Scientific and Industrial Research, Osaka University
-
EMURA Shuichi
The Institute of Scientific and Industrial Research, Osaka University
-
KOMURO Masanori
Electrotechnical Laboratory
-
Yu Soon
The Institute Of Scientific And Industrial Research Osaka University
-
Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
-
Asahi Hajime
The Institute Of Scientific And Industrial Research Osaka University
-
Emura Shuichi
The Institute Of Scientific And Industrial Research Osaka University
-
Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
関連論文
- CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
- Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
- Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
- Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
- Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
- Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
- Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
- Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
- Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
- Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
- Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- SiO_2/c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication
- SiO_2/Poly-Si Multilayered Electron Beam Resist Process for Fabrication of Ultrasmall Tunnel Junctions
- Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
- Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
- Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
- Electrical Properties of Nanometer-Width Refractory Metal Lines Fabricated by Focused Ion Beam and Oxide Resists
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists : Focused Ion Beam Process
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists : Beam-Induced Physics and Chemistry
- Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
- Focused Ga Ion Beam Etching of Si in Chlorine Gas
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- 1.3-1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists
- Fabrication of High-Resolution Fresnel Zone Plates by a Single Layer Resist Process
- 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
- Field Emission from Polycrystalline GaN Grown on Mo Substrate : Semiconductors
- High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
- Dual Function of Thin MoO_3 and WO_3 Films as Negative and Positive Resists for Focused Ion Beam Lithography
- Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer
- Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
- Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas
- Fundamental Characteristic of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film : Etching and Deposition Technology
- Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
- Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
- Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
- Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
- New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
- Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams
- Conditions for Fabrication of Highly Conductive Wires by Electron-Beam-Induced Deposition
- Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy
- Broad-Pulsed Ga Ion-Beam-Assisted Etching of Si with Cl_2
- Focused Ion Beam Lithography with Transition Metal Oxide Resists : Lithography Technology
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Anisotropy and Effective Charges in the Vibrational Spectra of Rhombohedral Boron-Rich Solids
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- Printing Sub-100 Nanometer Features Near-field Photolithography
- Characteristics of SiO_2 as a High-Resolution Electron Beam Resist
- Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
- A Focused He^+ Ion Beam with a High Angular Current Density
- Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
- 1.3–1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- Effect of Alloy Composition in Liquid AuSi Ion Source
- High Growth Rate for Slow Scanning in Electron-Beam-Induced Deposition
- High Impurity Doping in Si-MBE Using Liquid Ga Ion Source
- Infrared and Raman Study of Plasma-Deposited Amorphous B_C_x Films
- Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
- Focused Ion Beam Lithography with Transition Metal Oxide Resists
- Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
- Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
- Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Electric Probe Measurements in an ECR Plasma CVD Apparatus