Infrared and Raman Study of Plasma-Deposited Amorphous B_<1-x>C_x Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-06-30
著者
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GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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Shirai Koun
The Institute Of Scientific And Industrial Research Osaka University
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Emura Shuichi
The Institute Of Scientific And Industrial Research Osaka University
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
関連論文
- CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
- Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
- Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
- Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
- Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
- Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
- Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
- Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
- Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
- Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
- Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
- Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
- New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
- Short Range Order Structure of Amorphous Boron Prepared by Various Methods
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Anisotropy and Effective Charges in the Vibrational Spectra of Rhombohedral Boron-Rich Solids
- Cluster Calculation of the Electronic Structure of Icosahedral Boron
- Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
- The Basis Functions and the Matrix Representations of the Single and Double Icosahedral Point Group
- Infrared and Raman Study of Plasma-Deposited Amorphous B_C_x Films
- Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
- Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Electric Probe Measurements in an ECR Plasma CVD Apparatus