Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
TlInGaAs quaternary layers are grown on InP substrates by gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RUEED (reflection high-energy electron diffraction) patterns show (2×2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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OE Kunishige
NTT Opto-electronics Laboratories
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Oe Kunishige
Ntt Opto Electronics Laboratories:(present Address)kyoto Institute Of Technology
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
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GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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KOH Hideki
The Institute of Scientific and Industrial Research, Osaka University
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Takenaka K
Kyushu Univ. Fukuoka Jpn
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Asami K
The Institute Of Scientific And Industrial Research Osaka University
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Asami Kumiko
The Institute Of Scientific And Industrial Research Osaha University
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Gonda S
The Institute Of Scientific And Industrial Research Osaka University
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Gonda Satoshi
National Metrology Institute Of Japan National Institute Of Advanced Industrial Science And Technolo
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
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Koh H
The Institute Of Scientific And Industrial Research Osaka University
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TAKENAKA Keiichi
The Institute of Scientific and Industrial Research, Osaka University
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