Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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KANEKO Tadaaki
The Institute of Scientific and Industrial Research, Osaka University
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OKUNO Yasutoshi
The Institute of Scientific and Industrial Research, Osaka University
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Gonda S
The Institute Of Scientific And Industrial Research Osaka University
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Kaneko Tadaaki
The Institute Of Scientific And Industrial Research Osaka University
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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奥野 泰利
松下電器産業(株)
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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