Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes

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概要

• 論文の詳細を見る

• Oscillatory behavior of current in the forward current-voltage characteristics for InGaAs/InAlAs multiple quantum well pin diodes was observed at room temperature for the first time. This oscillation became extremely clear at low temperature (80 K), and the oscillatory bias voltage region shrank with decreasing the well numbers.

• 社団法人応用物理学会の論文
• 1986-11-20

著者

• Kawamura Y

  Ntt Opto-electronics Laboratories

• Kawamura Y

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Kawamura Y

  Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn

• Asahi H

  Osaka Univ. Osaka Jpn

• Asahi Hajime

  Ntt Atsugi Electrical Communication Laboratories

• Wakita K

  Chubu Univ. Aichi Jpn

• Wakita Koichi

  With Ntt Opto-electronics Laboratories:chubu University

• Kawamura Yuichi

  Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin

• KAWAMURA Yuichi

  NTT Atsugi Electrical Communication Laboratories

• WAKITA Koichi

  NTT Atsugi Electrical Communication Laboratories

• KURUMADA Katsuhiko

  NTT Atsugi Electrical Communication Laboratories

• Kurumada K

  Ntt Atsugi Electrical Communication Laboratories

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