New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
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概要
- 論文の詳細を見る
New III-V compound semiconductors TlInGaP (thallium indium gallium phosphide) lattice-matched to InP are proposed for 0.9 μm to over 10 μm wavelength range laser diodes and their first successful growth is reported by gas-source molecular beam epitaxy. A type-I band lineup and a larger band discontinuity in the conduction band than in the valence band are expected for their heterostructures. They also have the potential to exhibit a temperature-independent band-gap energy (wavelength), which is promising for the fabrication of lasers that can be used in wavelength division multiplexing (WDM) optical fiber communication. Grown layers exhibit (2×4) surface reconstruction and have mirror-like surfaces. Phase separation is not observed in this material system by X-ray diffraction measurement.
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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OE Kunishige
NTT Opto-electronics Laboratories
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Oe Kunishige
Ntt Opto Electronics Laboratories:(present Address)kyoto Institute Of Technology
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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IWATA Kakuya
The Institute of Scientific and Industrial Research, Osaka University
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Yamamoto K
Univ. Of Tsukuba
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YAMAMOTO Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University
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Iwata K
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Gonda S
The Institute Of Scientific And Industrial Research Osaka University
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
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Yamamoto K
Saga Univ. Saga Jpn
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