Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy (<Special Issue> Scanning Tunneling Microscopy)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-30
著者
-
Kim S‐j
Pohang Univ. Sci. And Technol. Kyungbuk Kor
-
Kim Seong-jin
Division Of Electronics And Information Technology Kist
-
NOH Joo-Hyong
Yokogawa Electric Corporation
-
KIM Seong-Jin
The Institute of Scientific and Industrial Research, Osaka University
-
ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
-
ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
-
GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
-
NOH Joo-Hyong
The Institute of Scientific and Industrial Research, Osaka University
-
KUROIWA Reiko
The Institute of Scientific and Industrial Research, Osaka University
-
IWATA Kakuya
The Institute of Scientific and Industrial Research, Osaka University
-
Noh J‐h
Yokohama National Univ. Yokohama Jpn
-
Kim Seong-jin
The Institute Of Scientific And Industrial Research Osaka University:(present Address) Electrotechni
-
Noh Joo-hyong
The Institute Of Scientific And Industrial Research Osaka University
-
Kim S‐j
National Institute For Material Science (nims):new Industry Creation Hatchery Center (niche) Tohoka
-
Iwata K
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
-
Asahi H
Osaka Univ. Osaka Jpn
-
Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
-
Asami K
The Institute Of Scientific And Industrial Research Osaka University
-
Asami Kumiko
The Institute Of Scientific And Industrial Research Osaha University
-
Gonda S
The Institute Of Scientific And Industrial Research Osaka University
-
Gonda Satoshi
National Metrology Institute Of Japan National Institute Of Advanced Industrial Science And Technolo
-
Kuroiwa Reiko
The Institute Of Scientific And Industrial Research Osaka University
-
Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
関連論文
- High Frequency Responses of YBa_2Cu_3O_ Josephson Junctions on Si Substrates Fabricated by Focused Electron Beam Irradiation
- Fabrication and Characterization of Strip-shaped Diamond Field Emitter Arrays
- Fabrication and Characterization of Strip-shaped Diamond Field Emitter Arrays
- Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
- Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
- Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
- Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
- Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
- Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
- Estimation and Correction Procedure for the Effects of Surface Roughness on Electron Probe Microanalysis
- Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy : Optical Properties of Condensed Matter
- Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy
- Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)
- Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
- Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
- Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
- Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
- Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
- Heteroepitaxial Growth of CeO_2 (001) Films on Si(001) Substrates by Pulsed Laser Depostion in Ultrahigh Vacuum
- Fluorine Doping and Superconductivity of Nd_2CuO_4 Thin Films
- Preparation of Ultrafine Crystalline TiO_2 Powders from Aqueous TiCl_4 Solution by Precipitation
- Sintering and Electrical Properties of (CeO_2)_(Gd_2O_3)_ Powders Prepared by Glycine-Nitrate Process for Solid Oxide Fuel Cell Applications
- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
- Optical Disk System Using a High-Numerical Aperture Single Objective Lens and a Blue LD
- Effects of Grain Boundaries on Temperature Dependence of Microwave Surface Resistance of YBa_2Cu_3O_ Thin Films
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- Development of 3D Focused-Ion-Beam (FIB) Etching Methods for Fabricating Micro- and Nanodevices
- Growth and Superconductivity of (BiPb)_2Sr_2Ca_2Cu_3O_ Single-Crystal Whiskers : Superconductors
- Electron-Beam-Damaged YBa_2Cu_3O_ Josephson Junctions for High-Frequency Device Applications(Special Issue on Superconductive Electron Devices and Their Applications)
- Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
- Atomic Layer Controlled Digital Etching of Silicon
- Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- 1.3-1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
- Electrooptic Characterization of Five-Layer Asymmetric Coupled Quantum Well
- Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change
- Anomalous Sharp Dip of Large Field-Induuced Refractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well
- Field Emission from Polycrystalline GaN Grown on Mo Substrate : Semiconductors
- High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
- Time-Resolved Electron Energy Analyzer
- Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
- Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
- Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
- Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
- Reliability of parameters of associated base straight line in step height samples : Uncertainty evaluation in step height measurements using nanometrological AFM
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
- Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Anisotropy and Effective Charges in the Vibrational Spectra of Rhombohedral Boron-Rich Solids
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
- Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
- 1.3–1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- Infrared and Raman Study of Plasma-Deposited Amorphous B_C_x Films
- Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
- Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
- Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
- Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Electric Probe Measurements in an ECR Plasma CVD Apparatus