Electron-Beam-Damaged YBa_2Cu_3O_<7-y> Josephson Junctions for High-Frequency Device Applications(Special Issue on Superconductive Electron Devices and Their Applications)
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概要
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We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa_2Cu_3O_<7-y> (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2mV. Microwave-induced Shapiro steps correspond to the double voltages Vn'=2nV_J, where V_J=f_0h/2e in two-junction arrays. The microwave power dependence of I-V curves shows the steps corresponding to the RSJ model.
- 社団法人電子情報通信学会の論文
- 1998-10-25
著者
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Kim S‐j
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Kim S‐j
National Institute For Material Science (nims):new Industry Creation Hatchery Center (niche) Tohoka
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KIM Sang-Jae
the Research Institute of Electrical Communication, Tohoku University
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YAMASHITA Tsutomu
the Research Institute of Electrical Communication, Tohoku University
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Yamashita Tsutomu
The Research Institute Of Electrical Communication Tohoku University
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