Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
TlInGaAs/InP double heterostructure light-emitting diodes were grown on (1OO) InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated at up to 340℃ with a wavelength around 1.58 μm. Very small temperature dependence of the electroluminescence peak energy (-0.09 meV/K) was observed, which is similar to the temperature dependence of the photoluminescence peak energy.
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Lee Hwack-joo
New Materials Evaluation Center Korea Research Institute Of Standards And Science
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
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Maeda Osamu
Department Of Urology Osaka Medical Center For Cancer And Cardiovascular Diseases
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Maeda Osamu
The Institute Of Scientific And Industrial Research Osaha University
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Maeda Osamu
Department Of Chemical Pharmacology Toho University School Of Pharmaceutical Sciences
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Asami K
The Institute Of Scientific And Industrial Research Osaha University
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Asami Kumiko
The Institute Of Scientific And Industrial Research Osaha University
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Maeda O
Yamaha Motor Advanced Technology Research Div.
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LEE Hui-Jae
The Institute of Scientific and Industrial Research, Osaka University
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KONISHI Kenta
The Institute of Scientific and Industrial Research, Osaka University
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MIZOBATA Akiko
The Institute of Scientific and Industrial Research, Osaka University
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Konishi K
The Institute Of Scientific And Industrial Research Osaha University
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Mizobata Akiko
The Institute Of Scientific And Industrial Research Osaha University
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Konishi Kenta
The Institute of Scientific and Industrial Research, Osaha University
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