Gas Source Molecular Beam Epitaxial Growth of GaN_<1-x>P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

概要

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The GaN-rich side of GaN_<1-x>P_x alloy exhibits a potentially large variation in band-gap energy with P content due to its large bowing. GaN_<1-x>P_x layers are grown on (0001) sapphire substrates by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ion-removed ECR radical cell after the growth of high-quality GaN layers. During the growth of the high-quality GaN layers, ×2 reflection high-energy electron diffraction (RHEED) patterns are observed. During the growth of the GaN_<1-x>P_x layers, RHEED pattern exhibits a ×1 streak. The near band edge excitonic photoluminescence (PL) peak from the GaN-rich side of the GaN_<1-x>P_x layers shows a large red shift with change in P content. A P content of as large as x=0.015 is obtained. However, at x=0.015 phase separation into GaN-rich GaN_<1-x>P_x and GaP-rich GaP_<1-y>N_y is observed.
社団法人応用物理学会の論文
1996-12-15