Gonda S | The Institute Of Scientific And Industrial Research Osaka University

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著作論文

CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
Heteroepitaxial Growth of CeO_2 (001) Films on Si(001) Substrates by Pulsed Laser Depostion in Ultrahigh Vacuum
Fluorine Doping and Superconductivity of Nd_2CuO_4 Thin Films
Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
Reliability of parameters of associated base straight line in step height samples : Uncertainty evaluation in step height measurements using nanometrological AFM
New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

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