Asami Kumiko | The Institute Of Scientific And Industrial Research Osaha University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy

もっと見る

スポンサーリンク