High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-03-01
著者
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
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IWATA Kakuya
The Institute of Scientific and Industrial Research, Osaka University
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FUSHIDA Masahiro
The Institute of Scientific and Industrial Research, Osaka University
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Yu S
Department Of Electronics Engineering Sun Moon University
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Yu Soon
Department Of Electronics Engineering And Center For Science And Advanced Technology Sun Moon Univer
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Iwata K
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Asami K
The Institute Of Scientific And Industrial Research Osaka University
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Asami Kumiko
The Institute Of Scientific And Industrial Research Osaha University
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Fudeta Mayuko
The Institute Of Scientific And Industrial Research Osaka University
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Fujita Hideki
Nissin Electric Co. Ltd
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CONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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Conda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
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Fushida Masahiro
The Institute Of Scientific And Industrial Research Osaka University
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