Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
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概要
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The effects of chromium doping on the luminescence properties of the deep levels in gallium nitride (GaN) have been studied exclusively. Chromium (Cr) doping induced a blue luminescent band (BL) centered in the range of 2.79–2.91 eV with the limited Cr doping concentration varying from 0.5% to 1.5% and also a slight increase in the intensity of the yellow luminescent band (YL). By analyzing the luminescent spectrum obtained with different excitation intensities, Cr doping concentration and temperature dependences revealed the nature of donor–acceptor pair transition for the observed blue band. The participating donor and acceptor are expected to be the deep-acceptor related center, CrGa, and the shallow compensating vacancy complex, CrGa–VN respectively.
- 2006-04-30
著者
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Zhou Yi
The Institute Of Scientific And Industrial Research Osaha University
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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Kim Moo
The Institute Of Scientific And Industrial Research Osaka University
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Kimura Shigeya
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Subashchandran Shanthi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kobayashi Satoru
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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