Generation of Spin Current in Bipolar Conductors
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概要
- 論文の詳細を見る
The ordinary Hall effect (OHE), which is caused by an external magnetic field, was studied as a mechanism for the generation of spin current. It has been theoretically elucidated that, under an open-circuit condition, the OHE can contribute to spin-current generation when spin-polarized electrons and holes are simultaneously present as mobile carriers. This OHE contribution to spin current generation is caused by the steady-state kinematics of electrons and holes whose transverse velocities have the same direction. Although anomalous Hall effects may contribute to spin-current generation, the OHE plays a principal role in the generation of spin current when electrons and holes have approximately the same transport characteristics. The experimental aspects of possible materials for the isomorphic electron and hole systems are argued on the basis of the experimental results of the magnetotransport measurement of yttrium dihydride and preliminary results of the magnetization measurement of hydrogenated films of gadolinium.
- 2011-10-25
著者
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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Oshima Akihiro
The Institute Of Scientific And Industrial Research Osaka University
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Sakai Masamichi
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Sakuraba Takahito
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Honda Zentaro
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Kitajima Akira
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Higuchi Koji
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Nakamura Osamu
Core Technologies R&D Division, Casio Computer Co., Ltd., Ome, Tokyo 198-0022, Japan
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Oshima Akihiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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