Negative Magnetoresistance Generated by Combination of Spin--Orbit Interaction and Applied Magnetic Field
スポンサーリンク
概要
- 論文の詳細を見る
We have theoretically studied a negative magnetoresistance (MR) the mechanism of which is completely different from conventional mechanisms, i.e., spin-related mobility-increased mechanisms and orbital-motion-related mechanisms including a quantum interference effect. Our proposed negative MR is caused by the interplay between a spin--orbit interaction (SOI) and the Lorentz force due to an externally applied magnetic field. We have phenomenologically approached this mechanism using the Drude-like model, in which the carrier scattering by SOI is considered as a transverse scattering term in addition to the longitudinal scattering term due to usual collisions and the Lorentz force term. Also, the possibility of observing our proposed negative MR was discussed by comparing our prediction with experimental results for Ni and Gd films, which were newly measured in this study.
- 2012-02-25
著者
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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Oshima Akihiro
The Institute Of Scientific And Industrial Research Osaka University
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Kodama Daisuke
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Sakai Masamichi
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Sakuraba Takahito
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Honda Zentaro
Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Kitajima Akira
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Higuchi Koji
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Nakamura Osamu
Core Technologies R&D Division, Casio Computer Co., Ltd., Ome, Tokyo 198-0022, Japan
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Nakamura Osamu
Core Technologies R&D Division, Casio Computer Co., Ltd., Ome, Tokyo 198-0022, Japan
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Hasegawa Shigehiko
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Oshima Akihiro
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Oshima Akihiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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