Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110)
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概要
- 論文の詳細を見る
The local tunneling barrier height at and around subsurface Zn acceptor atoms on GaAs(110) has been investigated by scanning tunneling microscopy (STM) and local barrier height (LBH) imaging. The measured LBH showed the bias dependence, which was in good agreement with the theoretical simulation that takes into account the effect of tip-induced band bending (TIBB). Above the acceptor sites, the bias dependence of LBH shifted to the positive-bias side as compared with that of the area distant from acceptors. We explained the observed shift by the additional local band bending that is induced by ionized acceptors.
- 2010-10-25
著者
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Kobayashi Kengo
Department Of Internal Medicine Asahi Rosai Hospital
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Kurokawa Shu
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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Kurokawa Shu
Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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Kobayashi Kengo
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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