Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
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概要
- 論文の詳細を見る
Cubic GaCrN films were synthesized on MgO(001) substrates using plasma-assisted molecular-beam epitaxy, and room-temperature ferromagnetism was observed. It is suggested that these samples show more single cubic phases than those grown on Al2O3(0001) substrates. The influences of V/III ratio and Cr cell temperature on the properties of the grown GaCrN films were characterized extensively. The V/III ratio which controls the Cr incorporation in the GaCrN thin films was one of the key parameters. The Cr incorporation was larger in the GaCrN films grown under N-rich conditions than those under Ga-rich conditions. Moreover, a Ga4Cr secondary phase was also seen in the GaCrN film when it was grown under Ga-rich conditions. High-concentration Cr doping resulted in the formation of a CrN secondary phase.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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Zhou Yi
The Institute Of Scientific And Industrial Research Osaha University
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Emura Shuichi
The Institute Of Scientific And Industrial Research Osaka University
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Ishimaru Manabu
The Institute Of Scientific And Industrial Research Osaka University
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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Hirotsu Yoshihiko
The Institute Of Science And Industrial Research Osaka University
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Kim Moo
The Institute Of Scientific And Industrial Research Osaka University
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Zhou Yi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Hirotsu Yoshihiko
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kimura Shigeya
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Subashchandran Shanthi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kobayashi Satoru
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Asahi Hajime
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Hasegawa Shigehiko
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Emura Shuichi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Ishimaru Manabu
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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