Electron Microscopy Study on Amorphous Ge-Sb-Te Thin Film for Phase Change Optical Recording
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概要
- 論文の詳細を見る
Atomic structures of a sputtered amorphous Ge5Sb70Te25 thin film as a phase change optical recording material included in a rewritable optical disk have been studied by transmission electron microscopy (TEM) and nanobeam electron diffraction. Cross-sectional high-resolution TEM revealed that crystalline atomic cluster regions as small as 2 nm are formed in the as-sputtered amorphous Ge5Sb70Te25 thin film. Atomic pair-distribution functions derived from a halo diffraction intensity analysis suggested that the as-sputtered Ge5Sb70Te25 thin film including the crystalline clusters has an atomic configuration similar to that of the amorphous Sb structure.
- Japan Society of Applied Physicsの論文
- 2003-10-01
著者
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Hirotsu Yoshihiko
The Institute Of Scientific And Industrial Research Osaka University
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Ishimaru Manabu
The Institute Of Scientific And Industrial Research Osaka University
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Naito Muneyuki
The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567
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Takashima Masaki
Yokohama Laboratory, Center for Analytical Chemistry and Scientific, Inc., Kamoshida-cho, Aoba-ku, Y
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Naito Muneyuki
The Institute Of Scientific And Industrial Research Osaka University
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Takashima Masaki
Yokohama Laboratory` Center For Analytical Chemistry And Scientific Inc.
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Hirotsu Yoshihiko
The Institute Of Science And Industrial Research Osaka University
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