Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers

概要

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The annealing characteristics of low-dose separation-by-implanted-oxygen (SIMOX) (100) Si have been investigated by transmission electron microscopy (TEM). Samples are prepared by 60, 120, and 210 keV oxygen implantations with doses between $1.0\times 10^{17}$ and $6.0\times 10^{17}$/cm2 at 560 °C, followed by annealing at temperatures between 1000 and 1350 °C for 5 to 60 min in a vacuum of $10^{-6}$ Torr. As-implanted layers split into two sublayers during high-temperature annealing. The shallow SiO2 precipitate region is located at around projected range $(R_{\text{p}})/2$ instead of damage peak ($D_{\text{p}}$), while the deep buried oxide layer (BOX) lies at around $R_{\text{p}}$. Also, during the same annealing stages, cavities and SiO2 precipitates are produced and then dissolved in the near surface region above $R_{\text{p}}/2$. These experimental results are discussed, referring to the point defect distributions in the substrates obtained by Monte Carlo simulation.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-10-15