Boron Observation in p-Type Silicon Device by Spherical Aberration Corrected Scanning Transmission Electron Microscope
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概要
- 論文の詳細を見る
The boron detection in p-type metal oxide silicon (MOS) device had long been pursued with electron microscopy based analytical tools, but was not successful because of weak signal and interference from the matrix. With spherical aberration corrected electron microscope with newly designed sample holder, mesh and focused ion beam (FIB) damage removing process, boron in the extension area of the p-type MOS device was detected. This enables us to visualize the dopant distribution in silicon devices, which is indispensable to analyze transistor characteristics.
- Japan Society of Applied Physicsの論文
- 2008-07-25
著者
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YAGUCHI Toshie
Hitachi High Technologies Corp.
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KONNO Mitsuru
Hitachi High Technologies Corp.
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Konno Mitsuru
Hitachi High-technology Corp.
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Mori Hirotaro
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Yaguchi Toshie
Hitachi High-technology Corp.
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Hashikawa Naoto
Renesas Electronics Corp. Tokyo Jpn
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Asayama Kyoichiro
Renesas Electronics Corp. Tokyo Jpn
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Kajiwara Kazuto
Renesas Technology Corp., 751 Horiguchi, Katsuta, Ibaraki 312-8504, Japan
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Kajiwara Kazuto
Renesas Technology Corp.
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