A Dopant Cluster in a Highly Antimony Doped Silicon Crystal
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概要
- 論文の詳細を見る
- 2010-08-25
著者
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Sawada Hidetaka
Japan Science And Technology Agency Crest
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Takayanagi Kunio
Department Of Physics Tokyo Institute Of Technology
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Takayanagi Kunio
Department Of Condense Matter Physics Tokyo Institute Of Technology
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Tanishiro Yasumasa
Department Of Physics Tokyo Institute Of Technology
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KIM Suhyun
Department of Physics, Tokyo Institute of Technology
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OSHIMA Yoshifumi
Japan Science and Technology Agency, CREST
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HASHIKAWA Naoto
Renesas Electronics Corporation
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ASAYAMA Kyoichiro
Renesas Electronics Corporation
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KANEYAMA Tosikatu
Japan Science and Technology Agency, CREST
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KONDO Yukihito
Japan Science and Technology Agency, CREST
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Kondo Yukihito
Japan Science And Technology Agency Crest
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Hashikawa Naoto
Renesas Electronics Corp. Tokyo Jpn
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Kim Suhyun
Department Of Physics Tokyo Institute Of Technology
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Oshima Yoshifumi
Japan Science And Technology Agency Crest
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Oshima Yoshifumi
Department Of Materials Science And Engineering Tokyo Institute Of Technology
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Asayama Kyoichiro
Renesas Electronics Corp. Tokyo Jpn
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Kaneyama Tosikatu
Japan Science And Technology Agency Crest
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Kim Suhyun
Department of Electronics and Communications Engineering, Kwangwoon University, 139-701 Seoul, Korea
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Tanishiro Yasumasa
Department of Material Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
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KONDO Yukihito
Japan Electron Optics Laboratory Ltd
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