Polymorphs Discrimination of Nickel Silicides in Device Structure by Improved Analyses of Low Loss Electron Energy Loss Spectrum
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概要
- 論文の詳細を見る
Transmission electron microscope (TEM) with electron energy loss spectroscopy (EELS) is an indispensable tool in developing the nickel silicide structures in transistors of 65 nm node or further. The low loss EELS is a simple method in discriminating the phases of nickel silicides, however it has an energy resolution problem, because of the electrical and mechanical instability of the hardware. This problem can be overcome by proposed energy calibration by standards (ECS) method, where the well-calibrated plasmon loss peak of Si ($E_{\text{p}} = 16.6$ eV) EELS spectrum and zero loss peak are used as references. For this purpose, the low loss spectra of the nickel silicide and two references can be simultaneously acquired by the newly designed spatially resolved TEM-EELS.
- Japan Society of Applied Physicsの論文
- 2007-06-25
著者
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Terada Shohei
Hitachi Research Lab. Hitachi Ltd.
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Mori Hirotaro
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Hashikawa Naoto
Renesas Electronics Corp. Tokyo Jpn
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Asayama Kyoichiro
Renesas Electronics Corp. Tokyo Jpn
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Yamaguchi Tadashi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Mori Hirotaro
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Hashikawa Naoto
Renesas Technology Corp., 5-20-1 Josuihon-cho, Kodaira, Tokyo 187-8588, Japan
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Yamaguchi Tadashi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Terada Shohei
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Ohmika-cho, Hitachi, Ibaraki 319-1292, Japan
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