Time-resolved acquisition technique for elemental mapping by energy-filtering TEM

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概要

• 論文の詳細を見る
• Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
• 2001-04-01

著者

• AOYAMA Takashi

  Hitachi Research Laboratory, Hitachi Ltd.

• MITSUI Yasuhiro

  Semiconductor & Integrated Circuits Division, Hitachi Ltd.

• Yano F

  Semiconductor & Integrated Circuits Division Hitachi Limited

• Yano Fumiko

  Central Research Laboratory Hitachi Ltd.

• Terada Shohei

  Hitachi Research Laboratory Hitachi Limited

• Terada Shohei

  Hitachi Research Lab. Hitachi Ltd.

• Aoyama T

  Hitachi Research Laboratory Hitachi Limited

• YANO Fumiko

  Semiconductor & Integrated Circuits Division, Hitachi Limited

• Mitsui Y

  Semiconductor & Integrated Circuits Division Hitachi Limited

• Aoyama Takashi

  Hitachi Research Laboratory Hitachi Ltd

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• Quick External Leakage Inspection Method for Gas Supplying System in Semiconductor Facility Using Atmospheric Pressure Ionization Mass Spectrometer
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• Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
• Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
• Quantitative Analysis of Trace Water in Monosilane Gas Using Atmospheric-Pressure Ionization Mass Spectrometer with Bicompartment Ion Source
• Quantitative Analysis of Trace Water in Highly Puified Nitrogen Gas by Atmospheric Pressure Ionization Mass Spectrometer
• Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM
• Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
• Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
• X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)
• The development and characteristics of a high-speed EELS mapping system for a dedicated STEM
• Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
• Development of a real-time jump-ratio imaging system equipped with a STEM
• Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
• TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
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• Low-Temperature Bonding of Silver to Aluminum
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