Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
スポンサーリンク
概要
- 論文の詳細を見る
Dislocation formation and impurity distributions in metal-silicon contact areas were investigated by means of cross-sectional transmission electron microscopy (TEM) images and energy-dispersive X-ray measurement. Dislocations were formed in the (111) plane in the [110] direction by annealing at 700℃ when W was used as barriermetal. As the diameter of contact holes decreased, dislocations became more significant. Both W and As concentration profiles in the horizontal direction showed maxima at the edges of contact holes. The diffusion length of W in the edge areas was about twice that in the center according to depth profile. This implied that stress in edgeareas increased the W diffusion coefficient by a factor of about four.
- 1993-08-15
著者
-
Koike Yoshihiko
Hitachi Research Laboratory Hitachi Ltd.
-
Misawa Yutaka
Hitachi Research Laboratory Hitachi Lid.
-
Suzuki Takaya
Hitachi Limited Hitachi Research Laboratory
-
Aoyama Takashi
Hitachi Research Laboratory Hitachi Ltd
-
Suzuki Masayuki
Semiconductor And Integrated Circuit Division Hitachi Ltd.
-
SUZUKI Masayuki
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.
-
MISAWA Yutaka
Hitachi Research Laboratory, Hitachi, Ltd.
-
AOYAMA Takashi
Hitachi Research Laboratory, Hitachi, Ltd.
関連論文
- Nitrogen Distribution and Chemical Bonding State Analyses in Oxynitride Film by Spatially Resolved Electron Energy Loss Spectroscopy (EELS)
- Two-Dimensional Boron Analysis in Borophosphosilicate Glass Film Using Transmission Electron Microscope with Imaging Filter
- Spatially-resolved EELS analysis of multilayer using EFTEM and STEM
- Strain Distribution Measurement in Stainless Steels by Convergent-Beam Electron Diffraction
- Electrical Conduction of Silicon Nitride Films Deposited by SiH_4-NH_3 Reaction
- Characteristics of Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall-Type Reactor for High-Volume Epitaxy
- Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
- Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
- Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
- Electrical and Mechanical Properties of Silicon Nitride Films Deposited by the SiCl_4-NH_3 Reaction
- Cracks in Silicon Dioxide-Phosphosilicate Glass-Silicon Nitride Composite Layer on Silicon Substrates
- Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM
- Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
- Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
- Elimination of Stacking Fault in Si Epitaxial Layer by Heat Treatment
- Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
- Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- Development of a real-time jump-ratio imaging system equipped with a STEM
- Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
- TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
- Transmission Electron Microscope Sample Shape Optimization for Energy Dispersive X-Ray Spectroscopy Using the Focused Ion Beam Technique
- Electromigration Resistance Measurements of Multilayered Interconnections by Short Test Lines
- Critical Radial Temperature Gradient Inducing Slip Dislocations in Silicon Epitaxy Using Dual Heating of the Two Surfaces of a Wafer