Electrical and Mechanical Properties of Silicon Nitride Films Deposited by the SiCl_4-NH_3 Reaction

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概要

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• Both the electrical conductivity of silicon nitride films at room temperature and the radius of curvature of a silicon wafer with a silicon nitride film are fairly independent of the deposition temperature and NH_3/SiCl_4 ratio during silicon nitride deposition. When a certain amount of hydrogen is added to the nitrogen carrier gas, the electrical conductivity decreases. The radius of curvature of a wafer with a film deposited by the SiCl_4-NH_3 reaction is smaller than that of a wafer with a film deposited by the SiH_4-NH_3 reaction.

• 社団法人応用物理学会の論文
• 1980-10-05

著者

• Misawa Yutaka

  Hitachi Research Laboratory Hitachi Ltd.

• Misawa Yutaka

  Hitachi Research Laboratory Hitachi Lid.

• YAGI Hideyuki

  Hitachi Research Laboratory, Hitachi Lid.

• Yagi Hideyuki

  Hitachi Research Laboratory Hitachi Ltd.

• Yagi Hideyuki

  Hitachi Research Laboratory Hitachi Lid.

関連論文

• Electrical Conduction of Silicon Nitride Films Deposited by SiH_4-NH_3 Reaction
• Electrical and Mechanical Properties of Silicon Nitride Films Deposited by the SiCl_4-NH_3 Reaction
• Cracks in Silicon Dioxide-Phosphosilicate Glass-Silicon Nitride Composite Layer on Silicon Substrates
• Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
• Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology

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