Cracks in Silicon Dioxide-Phosphosilicate Glass-Silicon Nitride Composite Layer on Silicon Substrates

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概要

• 論文の詳細を見る

• Cracks occur more easily in the silicon dioxide (SiO_2)-phosphosilicate glass (PSG)-silicon nitride (Si_3N_4) composite layer on silicon substrates than in the SiO_2-Si_3N_4 composite layer. The Si_3N_4 limit thickness with respect to crack occurrence in the SiO_2-PSG-Si_3N_4 composite layer decreases with increasing PSG film thickness within the range of 0-1500 Å, with increasing P_2O_5 concentration in PSG film within the range of 0-10 mol% and with increasing Si_3N_4 deposition temperature. The local reaction of Si_3N_4 with P_2O_5 is probably the reason for crack occurrence in the SiO_2-PSG-Si_3N_4 composite layer.

• 社団法人応用物理学会の論文
• 1977-07-05

著者

• Misawa Yutaka

  Hitachi Research Laboratory Hitachi Ltd.

• Misawa Yutaka

  Hitachi Research Laboratory Hitachi Lid.

• YAGI Hideyuki

  Hitachi Research Laboratory, Hitachi Lid.

• Yagi Hideyuki

  Hitachi Research Laboratory Hitachi Lid.

関連論文

• Electrical Conduction of Silicon Nitride Films Deposited by SiH_4-NH_3 Reaction
• Electrical and Mechanical Properties of Silicon Nitride Films Deposited by the SiCl_4-NH_3 Reaction
• Cracks in Silicon Dioxide-Phosphosilicate Glass-Silicon Nitride Composite Layer on Silicon Substrates
• Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
• Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology

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