Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• KAKIBAYASHI Hiroshi

  Central Research Laboratory, Hitachi Ltd.

• AOYAMA Takashi

  Hitachi Research Laboratory, Hitachi Ltd.

• MITSUI Yasuhiro

  Semiconductor & Integrated Circuits Division, Hitachi Ltd.

• Yano F

  Semiconductor & Integrated Circuits Division Hitachi Limited

• Yano Fumiko

  Central Research Laboratory Hitachi Ltd.

• Aoyama T

  Hitachi Research Laboratory Hitachi Limited

• YANO Fumiko

  Semiconductor & Integrated Circuits Division, Hitachi Limited

• Mitsui Y

  Semiconductor & Integrated Circuits Division Hitachi Limited

• Kakibayashi Hiroshi

  Central Research Laboratory Hitachi Ltd.

• Kakibayashi Hiroshi

  Central Research Laboratory Hitachi Ltd

• Aoyama Takashi

  Hitachi Research Laboratory Hitachi Ltd

関連論文

• Observation of Fe-Mn Oxidation Process Using Specimen Transfer Chamber and Ultrahigh-Vacuum Transmission Electron Microscope
• Nitrogen Distribution and Chemical Bonding State Analyses in Oxynitride Film by Spatially Resolved Electron Energy Loss Spectroscopy (EELS)
• Two-Dimensional Boron Analysis in Borophosphosilicate Glass Film Using Transmission Electron Microscope with Imaging Filter
• Influence of Ion Sputtering on Auger Electron Spectroscopy Depth-Profiling of GaAs / AlGaAs Superstructure
• Comparison of Microstructure of Cross-Sectional CoCr Thin Film Specimens Prepared by Fracture, Microtome, and Ion-Beam Thinning Methods
• Microstructure of CoCr Thin Films Prepared by Sputtering
• Spatially-resolved EELS analysis of multilayer using EFTEM and STEM
• Microstructure of Visible Light Emitting Porous Silicon
• Strain Distribution Measurement in Stainless Steels by Convergent-Beam Electron Diffraction
• The Study of Ultrathin Tantalum Oxide Films before and after Annealing with X-Ray Photoelectron Spectroscopy
• Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type
• Quick External Leakage Inspection Method for Gas Supplying System in Semiconductor Facility Using Atmospheric Pressure Ionization Mass Spectrometer
• Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
• Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
• Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
• Quantitative Analysis of Trace Water in Monosilane Gas Using Atmospheric-Pressure Ionization Mass Spectrometer with Bicompartment Ion Source
• Quantitative Analysis of Trace Water in Highly Puified Nitrogen Gas by Atmospheric Pressure Ionization Mass Spectrometer
• Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM
• Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
• Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
• X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)
• Highly Accurate Composition Analysis of (Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
• Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
• Strained Lattice Structure Analysis of InGaAsP Multilayers Using Thickness Fringes in Transmission Electron Microscopy Images
• High Resolution X-Ray Elemental Mapping Using 300-kV Field-Emission TEM
• Direct Observation of Strain Distribution in InP/In_Ga_xP Heterointerfaces by the Compositional Analysis by Thickness Fringe Method
• Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
• Development of a real-time jump-ratio imaging system equipped with a STEM
• Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
• TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
• Decametric Radiations from a Large Scale Magnetic Loop in the Solar Corona
• Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
• Three-dimensional STEM for observing nanostructures
• Position Alignment in Algebraic Reconstruction Method by Using Center of Gravity
• Simulation Study of Noise Influence in 3-Dimensional Reconstruction using High-Angle Hollow-Cone Dark-Field Transmission Electron Microscope Images
• Atomic Species Analysis and Three-Dimensional Observation by High-Angle Hollow-Cone Dark-Field Transmission Electron Microscopy
• Transmission Electron Microscope Sample Shape Optimization for Energy Dispersive X-Ray Spectroscopy Using the Focused Ion Beam Technique
• Observation of Incoherent Images through Minute Fluctuations of Lens Excitation Current
• Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
• Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/Al_xGa_ As Multilayer Structure
• Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/ Al_xGa_As Superstructure
• Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
• New Structure on TiN(001) Cleaved Surfaces
• Depth Profiling of Superstructures by μ-AES Utilizing Angle-Lapped Specimens: Techniques, Instrumentations and Measurement
• Detection of Strain in InP/InGaP Superlattices by Dark-Field Electron Microscopy and Nano-Diffraction Technique
• Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron Microscopy
• Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation
• Demonstration of Deoxyribonuclease I in Bile Juice by a Non-Radioactive Zymographical Method
• Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs

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