Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type

スポンサーリンク

概要

著者

関連論文

Observation of Fe-Mn Oxidation Process Using Specimen Transfer Chamber and Ultrahigh-Vacuum Transmission Electron Microscope
Influence of Ion Sputtering on Auger Electron Spectroscopy Depth-Profiling of GaAs / AlGaAs Superstructure
Comparison of Microstructure of Cross-Sectional CoCr Thin Film Specimens Prepared by Fracture, Microtome, and Ion-Beam Thinning Methods
Microstructure of CoCr Thin Films Prepared by Sputtering
0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
Group Delay of a Coupled-Defect Waveguide in a Photonic Crystal
Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
Group-Delay Properties of Coupled-Defect Structures in Photonic Crystals
Microstructure of Visible Light Emitting Porous Silicon
Present Status and Future Issues of III-V Semiconductor Nanowires
Optical Properties of GaAs Nano-Whiskers
Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type
Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
Highly Accurate Composition Analysis of (Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
AFM Characterization of GaAs/AlGaAs Waveguides (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Photoluminescence Characteristics of GaAs Nanowhiskers: Effects of Depletion Potential (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
Strained Lattice Structure Analysis of InGaAsP Multilayers Using Thickness Fringes in Transmission Electron Microscopy Images
High Resolution X-Ray Elemental Mapping Using 300-kV Field-Emission TEM
Direct Observation of Strain Distribution in InP/In_Ga_xP Heterointerfaces by the Compositional Analysis by Thickness Fringe Method
A new FIB fabrication method for micropillar specimens for three-dimensional observation using scanning transmission electron microscopy
Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
Three-dimensional STEM for observing nanostructures
A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low dose elements in fine semiconductor devices
Position Alignment in Algebraic Reconstruction Method by Using Center of Gravity
Simulation Study of Noise Influence in 3-Dimensional Reconstruction using High-Angle Hollow-Cone Dark-Field Transmission Electron Microscope Images
Atomic Species Analysis and Three-Dimensional Observation by High-Angle Hollow-Cone Dark-Field Transmission Electron Microscopy
Observation of Incoherent Images through Minute Fluctuations of Lens Excitation Current
Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/Al_xGa_ As Multilayer Structure
Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/ Al_xGa_As Superstructure
Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
New Structure on TiN(001) Cleaved Surfaces
Depth Profiling of Superstructures by μ-AES Utilizing Angle-Lapped Specimens: Techniques, Instrumentations and Measurement
Detection of Strain in InP/InGaP Superlattices by Dark-Field Electron Microscopy and Nano-Diffraction Technique
Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron Microscopy
Microstructures of Co/Cr Bilayer Films Epitaxially Grown on MgO Single-Crystal Substrates
Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation
High-Resolution Stress Mapping of 100-nm Devices Measured by Stress TEM
40-Gbit/s Operation of Ultracompact Photodetector-Integrated Dispersion Compensator Based on One-Dimensional Photonic Crystals
Dispersion Compensation in 40 Gb/s Non-Return-to-Zero Optical Transmission System Using Coupled-Cavity Photonic Crystals
Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs

もっと見る

スポンサーリンク