Photoluminescence Characteristics of GaAs Nanowhiskers: Effects of Depletion Potential (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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概要
- 論文の詳細を見る
Photoluminescence characterization with a surface treatment suggests that a reduction in the radiative recombination rate of GaAs nanowhiskers is caused by charge separation in depletion potential. Good agreement is obtained between photoluminescence characteristics and calculations based on self-consistent wavefunctions confined in the depletion potential.The radiative life time of 200-nm GaAs nanowhiskers at 77 K is estimated as short as 0.5 ns if the depletion potential is completely eliminated. Weak size dependence of photoluminescence spectra at 6 K is explained as a sign of band-gap reduction induced by the depletion potential.
- 社団法人電子情報通信学会の論文
- 1996-11-25
著者
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Ogawa Kensuke
Central Research Laboratory Hitachi Ltd.
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Hosomi Kazuhiko
Nanoelectronics Collaborative Research Center Institute Of Industrial Science University Of Tokyo
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Hiruma Kenji
Central Research Laboratory, Hitachi, Ltd.
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Hiruma Kenji
Central Research Laboratory Hitachi Ltd.
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Ogawa K
Central Research Laboratory Hitachi Ltd.
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Haraguchi Kei-ichi
Central Research Laboratory Hitachi Ltd.
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Katsuyama Toshio
Central Research Laboratory Hitachi Ltd.
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Hiruma K
Central Research Laboratory Hitachi Ltd.
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