Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
スポンサーリンク
概要
- 論文の詳細を見る
A one-dimensional coupled-defect-type photonic crystal with an attached Au mirror has a wavelength-independent high reflectance over a wide wavelength region. Its delay time for reflected light is more than four times that for transmitted light measured with the mirror removed even though the physical path length for the reflected light is only twice that for the transmitted light. This remarkably long delay is due to the reduction of the field coupling through mirror reflection. The reflection configuration can thus simultaneously provide long delay time and wavelength-independent low loss, properties that are never obtained in a transmission configuration and that are especially advantageous in the device applications of coupled-defect-type photonic crystals.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
-
Arakawa Yasuhiko
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
-
Hosomi Kazuhiko
Nanoelectronics Collaborative Research Center Institute Of Industrial Science University Of Tokyo
-
Fukamachi Toshihiko
Nanoelectronics Collaborative Research Center Institute Of Industrial Science University Of Tokyo
-
Katsuyama Toshio
Nanoelectronics Collaborative Research Center Institute Of Industrial Science University Of Tokyo
-
Fukamachi Toshihiko
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Hosomi Kazuhiko
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Katsuyama Toshio
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
関連論文
- Single-photon generator for telecom applications
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Thermodynamic and Transport Properties of CeMg_2Cu_9 under Pressure(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- 18pYD-2 UCu_2Snの熱膨張
- 17pYB-2 モット絶縁体Ca_2RuO_4の圧力下比熱
- 30pYL-12 単結晶Nd_Ce_CuO_4の歪み応答
- 30aYM-1 モット絶縁体Ca_2RuO_4の圧力効果
- 31pWA-1 カルコゲナイドスピネル化合物 CuRh_2S_4 の圧力誘起超伝導-絶縁体転移
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Correlation between superconductivity and in-plane resistivity in La_Sr_xCuO_4(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Unconventional Strain Dependence of Superconductivity in Spin-Triplet Superconductor Sr_2RuO_4
- 19aTE-2 La_Sr_xCuO_4単結晶におけるCuO_2面内電気抵抗率の圧力効果
- 18aYD-8 2次元性化合物CeMg_2T_9 (T=Ni, Cu)の異常物性
- 30aYK-9 近藤半導体CeRhAsの相転移と熱電物性
- 29pYL-14 La_Sr_xCuO_4における半導体相でのトンネル分光
- Existence of Co^ Low-Spin State in TbBaCo_2O_(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- In-phase and anti-phase interference fringes in Laue case
- X-ray Interference Fringe of Bragg-(Bragg)^m-Laue Case(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- In-phase and Anti-phase Interference Fringes in Rocking Curves of Resonant X-ray Dynamical Diffraction(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Amplification of reflected X-ray beams by the mirage effect
- Formation of interference fringes in the Bragg-(Bragg)[m]-Laue mode
- Bragg-(Bragg)[m]-Laue diffraction and its interference fringe
- Amplification of reflected X-ray beams by the mirage effect
- A Highly Efficient Optical Add-Drop Multiplexer Using Photonic Band Gap with Hexagonal Hole Lattice Photonic Crystal Slab Waveguides(Micro/Nano Photonic Devices,Microoptomechatronics)
- Transport and Magnetic Studies on the Spin State Transition of Pr_Ca_xCoO_3 up to High Pressure(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- 随想2題 : 隠れた内部構造 低温と研究のフロンティア
- Magnetic Structures of High Temperature Phases of TbBaCo_2O_ (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Highly Reactive Organopalladium Catalyst Formed on Sulfur-Terminated GaAs(001)-(2 × 6) Surface
- Novel Palladium Catalyst Supported on GaAs(001) Passivated by Ammonium Sulfide
- X-ray Interference Fringe in Bragg-(Bragg)^m-Laue Case from Thin Finite Crystal
- 0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
- Group Delay of a Coupled-Defect Waveguide in a Photonic Crystal
- Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
- Group-Delay Properties of Coupled-Defect Structures in Photonic Crystals
- Present Status and Future Issues of III-V Semiconductor Nanowires
- Optical Properties of GaAs Nano-Whiskers
- ^59Co-NMR Studies on La_4Co_3O_10+δ(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Cu NQR Study on the "Wipeout" Phenomenon in YBa_2Cu_3O_y : Condensed Matter: Electronic Properties, etc.
- Transport and Magnetic Properties of R_A_xCoO_3 (R = La, Pr and Nd; A = Ba, Sr and Ca)
- Effect of Strong Borrmann Absorption on X-Ray Fluorescence Yield Curves
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge
- Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type
- Image Contrast of Lattice Defects in X-Ray Topography by Resonant Scattering : Optical Properties of Condensed Matter
- Ru-NMR Studies and Specific Heat Measurements of Bi_3Ru_3O_ and La_4Ru_6O_ (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Continuous-Wave Operation of 1.23μm Highly Strained InGaAs Quantum-Well Ridge Waveguide Lasers on GaAs Substrates
- Orgin of Enhanced Borrmann Effect in Asymmetric Laue Case
- Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- AFM Characterization of GaAs/AlGaAs Waveguides (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Photoluminescence Characteristics of GaAs Nanowhiskers: Effects of Depletion Potential (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- Photonic Crystal with Advanced Micro/Nano-Structures : Quantum Dots and MEMS(Photonic Crystals and Their Device Applications)
- 40-Gbit/s Operation of Ultracompact Photodetector-Integrated Dispersion Compensator Based on One-Dimensional Photonic Crystals
- Enhancement of Room Temperature Photoluminescence from InAs Quantum Dots by Irradiating Mn
- Phase determination of crystal structure factor using measured rocking curves
- 高温超電導材料I : 銅酸化物高温超電導体
- Pressure-induced Superconductivity in UIr(Condensed matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Nonlinear-Optic Silicon-Nanowire Waveguides
- Cavity Resonant Excitation of InGaAs Quantum Dots in Photonic Crystal Nanocavities
- Dispersion Compensation in 40 Gb/s Non-Return-to-Zero Optical Transmission System Using Coupled-Cavity Photonic Crystals
- Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- In Situ Scanning Tunneling Microscope Observation of InAs Wetting Layer Formation on GaAs(001) during Molecular Beam Epitaxy Growth at 500 °C
- 6aPS-1 希土類金属間化合物CeMg2Cu9の比熱(4f・5f電子系,重い電子系,遷移金属酸化物,領域8)
- Highly Reactive Organopalladium Catalyst Formed on Sulfur-Terminated GaAs(001)-($2 \times 6$) Surface