Detection of Strain in InP/InGaP Superlattices by Dark-Field Electron Microscopy and Nano-Diffraction Technique
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概要
- 論文の詳細を見る
Lattice bending around the interfaces of strained InP/InGaP/InP superlattices was analyzed by using thickness fringes in the dark-field electron microscopy and nanometer-area electron diffraction patterns. The present paper is complementary to a previous paper about strain detection by using thickness fringes in the bright-field electron microscopy (Jpn. J. Appl. Phys. 30 (1991) L52). By using the two methods, lattice bending around the interfaces of the superlattices with a lattice misfit of 1% was quantitatively evaluated in a three-dimensional form. Comparison between the methods and the usual lattice-imaging method in high-resolution electron microscopy (HREM) is discussed.
- 社団法人応用物理学会の論文
- 1991-06-01
著者
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Mihama Kazuhiro
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Mihama Kazuhiro
Department Of Applied Physics School Of Engineering Nagoya University
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Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
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Tanaka Nobuo
Department Of Agro-environmental Sciences Graduate School Of Bioresource And Bioenvironmental Scienc
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Tanaka Nobuo
Department Of Applied Physics School Of Engineering Nagoya University
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