Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
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概要
- 論文の詳細を見る
The surface morphology of MBE-grown Be-doped GaAs was studied by RHEED, SEM and TEM. {411}A facets were found on the (100) surface for Be 6×10^<19>cm^<-3> doping at a growth temperature of 630℃. The surface roughness due to this faceting was suppressed by misorienting the GaAs substrate from (100) toward (111)A; a 19.5° misorientation, i.e., a (411)A substrate, was found to be effective in realizing a smooth surface, even for Be 1×10^<20>cm<-3> doping.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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Goto S
Central Research Laboratory Hitachi Ltd.
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Kusano Chuushiro
Central Research Laboratory, Hitachi Ltd.
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Kusano C
Central Research Laboratory Hitachi Ltd.
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Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
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