Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer

概要

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The dependence of CdZnSe/ZnMgSSe laser diode characteristics on the band gap and net acceptor concentration of the cladding layer is investigated theoretically to provide quantitative guidelines for cladding layer design. Carrier overflow from the active layer to the cladding layer and the recombination current at the active layer are calculated taking into consideration band bending around the active layer. The calculated results are consistent with experimental and reported characteristics. The improvement in laser diode characteristics due to the use of the superlattice cladding layer and ZnSe substrate is estimated by this calculation. The improvement due to the use of the ZnSe substrate is more effective when the cladding layer band gap is less than 2.95 eV, and the superlattice is more effective when the band gap is more than 2.95 eV. It is shown that operating voltage of less than 5 V can be achieved for a 490 nm laser diode when using a superlattice cladding layer.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1996-02-28