Mochizuki Kazuhiro | Central Research Lab.hitachi Ltd.

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著作論文

Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors
The Effect on Turn-On Voltage (V_) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer
Operating Current Dependence of CdZnSe/ZnMgSSe Laser Diodes on Band Gap and Carrier Concentration of P-Type Cladding Layer
Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters
Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005
Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
Experimentally Proven Equation for the Collector-Depletion-Layer Transit Time of npn Bipolar Transistors
Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs
Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide
Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)

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