Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• The effect of stress on the current-induced degradation of current-voltage characteristics in AlGaAs/GaAs heterojunction bipolar transistors with Be-doped base layers is investigated. Transistors with different orientations of the emitter mesa and different thicknesses of the passivation film are bias tested at room temperature. The results are compared with the stress distributions along the emitter-base junction obtained from a two-dimensional calculation using the boundary element method. It is found that the degradation is caused by the diffusion of Be under high-current density operations and that the flux of Be diffusing from the base layer to the emitter layer is strongly related to the stress distributions around the periphery of the emitter-base junction.

• 社団法人応用物理学会の論文
• 1992-03-15

著者

• ISOMAE Seiichi

  Central Research Lab., Hitachi, Lid.

• Isomae S

  Hitachi Ltd. Tokyo Jpn

• MOCHIZUKI Kazuhiro

  Central Research Laboratory, Hitachi Ltd.

• MASUDA Hiroshi

  Central Research Laboratory, Hitachi, Ltd.

• Tanoue Tomonori

  Central Research Laboratory Hitachi Ltd.

• Kusano Chuushiro

  Central Research Laboratory, Hitachi Ltd.

• Masuda H

  Hitachi Ltd. Tokyo Jpn

• Mochizuki K

  Central Research Laboratory Hitachi Ltd.

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• Kusano C

  Central Research Laboratory Hitachi Ltd.

• Masuda Hiroshi

  Central Research Laboratory Hitachi Ltd.

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