Copper Distribution near a SiO_2/Si Interface under Low-Temperature Annealing
スポンサーリンク
概要
- 論文の詳細を見る
In relation to the thickness of a surface SiO_2 film, the behavior of copper atoms existing at the SiO_2/Si interface during low-temperature annealing (≤400℃) is investigated by an analytical method combining step-etching and multi-angle total reflection of X-ray fluorescence. It is shown that SiO_2 thickness plays an important role in the re-distribution of copper. For a 2-nm-thick SiO_2 film, copper diffused from the interface to the SiO_2 surface. On the other hand, in a 5-nm-thick SiO_2 film, copper diffused toward the bulk. This copper re-distribution behavior also affected the electrical characteristics, such as D_<it> and V_<th>, of the metal-oxide-semiconductor (MOS) capacitors. The degradation of oxide breakdown characteristics after 400℃ annealing suggests that copper atoms move around in the SiO_2 film before leaving the interface.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
-
ISOMAE Seiichi
Central Research Lab., Hitachi, Lid.
-
Yugami Jiro
Central Research Laboratory Hitachi Ltd.
-
Yugami Jiro
Central Research Laboratory
-
HOZAWA Kazuyuki
Central Research Laboratory
-
Hozawa Kazuyuki
Central Research Laboratory Hitachi Ltd.
-
ISOMAE Seiichi
Central Research Laboratory, Hitachi, Ltd.
関連論文
- Tunneling Acoustic Microscope
- Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
- The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System
- Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
- Copper Diffusion Behavior in SiO_2/Si Structure During 400℃ Annealing
- The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
- Cross-Sectional X-Ray Topographic Study of Lattice Distortion in Silicon Crystals with Oxide Film
- Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
- Copper Distribution near a SiO_2/Si Interface under Low-Temperature Annealing
- Copper Diffusion Behavior in SiO2/Si Structure During 400°C Annealing