The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
スポンサーリンク
概要
- 論文の詳細を見る
Gaseous impurities in a clean room (CR) atmosphere cause an increase in the native oxide thickness on H-terminated Si surfaces. The increase effect of ammonia is greater than other impurities. The increase mechanisms can be explained by a three-stage model. Ammonia generates an OH^- group by reacting with H_2O. The OH^- group etches off H-terminated Si atoms and the effectiveness of the H-termination on reducing the native oxide growth is lost. As a result, the native oxide thickness increases. The native oxide growth can be suppressed by reducing the level of alkaline contamination in the CR atmosphere.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
-
OHKURA Makoto
Central Research Lab., Hitachi, Lid.
-
Kojima H
Nagoya Univ. Nagoya Jpn
-
Yugami Jiro
Central Research Laboratory Hitachi Ltd.
-
Yugami Jiro
Central Research Laboratory
-
Ohkura M
Hitachi Ltd.
-
ITOGA Toshihiko
Central Research Laboratories, Hitachi Ltd.
-
KOJIMA Hisao
Central Research Laboratory, Hitachi Ltd.
-
Itoga T
Central Research Laboratory Hitachi Ltd.
-
Itoga Toshihiko
Central Research Laboratories Hitachi Ltd.
-
Yugami Jiro
Central Research Laboratory, Hitachi Ltd.
関連論文
- Tunneling Acoustic Microscope
- Sonic Spray Nebulizer for Inductively Coupled Plasma Atomic Emission Spectrometry
- Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
- Micro-Probe Reflection High-Energy Electron Diffraction Technique. : III. Observation of Polycrystalline Silicon Film on Crystalline Silicon Substrate Irradiated by Continuous-Wave Ar^+-Laser
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
- A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
- Development of Ammonia Adsorption Filter and Its Application to LSI Manufacturing Environment
- The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
- The Effect of IPA Adsorption on Thin Oxide
- The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System
- X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)
- Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
- Copper Diffusion Behavior in SiO_2/Si Structure During 400℃ Annealing
- Single Pulse Laser Annealing of a Double-Implanted Layer
- Degradation of n^+/p Junction Characteristics by Aluminum Contamination
- The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
- Controlling the Solid-Phase Nucleation of Amorphous Si by Means of a Substrate Step Structure and Local Phosphorus Doping
- Photoluminescence and Acceptor State of Na in ZnSe
- A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry
- Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry
- Copper Distribution near a SiO_2/Si Interface under Low-Temperature Annealing
- Copper Diffusion Behavior in SiO2/Si Structure During 400°C Annealing
- Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
- Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
- Degradation of n+/p Junction Characteristics by Aluminum Contamination